Mixed Signal Circuit Design

Philipp Scholz, Dr.-Ing.

 

 

 

Dr.-Ing.

Philipp Scholz

Leiter Messlabor

philipp.scholz@tu-berlin.de

+49 30 314-26803

Einrichtung Mixed Signal Circuit Design
Sekretariat EN4
Gebäude E-N
Raum E-N 435

Publikationen

2023

Hecht, U.; Ordouei, H.; Ledentsov, N.; Scholz, P.; Kurth, P.; Titkov, I.E.; Ledentsov, N.N.; Gerfers, F.
A 0.4 pJ/bit NRZ Voltage Mode VCSEL Driver for up to 224 Gbit/s SWDM Links
Optical Fiber Communication Conference (OFC) 2023
Herausgeber: Optical Society of America (OSA)
2023
Wittenhagen, E.; Kurth, P.; Lotfi, N.; Hecht, U.; Edler, J.; Scholz, P.; Gerfers, F.
A 12 GS/s RF-Sampler Employing Inductive Peaking in 22 nm FD-SOI CMOS
18th European Microwave Integrated Circuits Conference (EuMIC)
Herausgeber: IEEE
2023
Wittenhagen, E.; Artz, P.; Kurth, P.; Linnhoff, S.; Buballa, F.; Scholz, P.; Gerfers, F.
A Bulk-Controlled 12 GS/s Track and Hold Amplifier with >58 dBc SFDR and >53.5 dB SNDR in 22 nm FD-SOI CMOS
18th European Microwave Integrated Circuits Conference (EuMIC)
Herausgeber: IEEE
2023
Hecht, U.; Ledentsov Jr., N.; Ordouei, H.; Kurth, P.; Scholz, P.; Ledentsov, N.; Gerfers, F.
Digital Non-Linear Transmitter Equalization for PAM-N-Based VCSEL Links Enabling Robust Data Transmission of 100 Gbit/s and Beyond
Photonics, 10 (3) :280
2023
OpenAccess
Lotfi, N.; Scholz, P.; Gerfers, F.
The Fastest CMOS Single-Channel 5-bit Flash ADC Operating at 18.5 GS/s in 22 nm FD-SOI
2023 18th European Microwave Integrated Circuits Conference (EuMIC)
Herausgeber: IEEE
2023
Hecht, U.; Ordouei, H.; Ledentsov Jr., N.; Scholz, P.; Kurth, P.; Ledentsov, N.; Gerfers, F.
True Voltage-Mode NRZ VCSEL Transmitter enabling 60 Gbit/s at 0.37 pJ/bit in 22 nm FDSOI
IEEE 49th European Solid State Circuits Conference (ESSCIRC)
Herausgeber: IEEE
2023

2022

Kurth, P.; Misselwitz, K.; Scholz, P.; Hecht, U.; Gerfers, F.
A 0.007 mm2 48 - 53 GHz Low-Noise LC-Oscillator using an Ultra-Compact High-Q Resonator
14th German Microwave Conference (GeMiC), Seite 104-107
Herausgeber: IEEE
2022
Wittenhagen, E.; Artz, P.; Scholz, P.; Gerfers, F.
A 3 GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing with >55 dBFS SNR and >67 dBc SFDR up to 3 GHz in 22 nm CMOS SOI
IEEE Open Journal for Circuits and Systems
2022
OpenAccess
Lotfi, N.; Scholz, P.; Gerfers, F.
A 44 GHz-BW 18.5 GS/s Sampling Front-End Robust to Power Supply and Common-Mode Variations in 22 nm FDSOI
2022 17th European Microwave Integrated Circuits Conference (EuMIC)
Herausgeber: IEEE
2022
Artz, P. J.; Scholz, P.; Mausolf, T.; Gerfers, F.
A Fully-Differential 146.6-157.4 GHz LNA Utilizing Back Gate Control to Adjust Gain in 22 nm FDSOI
IEEE MTT-S International Microwave Symposium (IMS)
Herausgeber: IEEE
2022

2021

Wittenhagen, E.; Artz, P.; Scholz, P.; Gerfers, F.
A 3 GS/s >55 dBFS SNDR Time-Interleaved RF Track and Hold Amplifier with >67 dBc SFDR up to 3 GHz in 22FDX
IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seite 139-142
Herausgeber: IEEE
2021
Ghafarian, H.; Shivapakash, S.; Mortazavi, S.; Scholz, P.; Lotfi, N.; Gerfers, F.
A 9-bit, 45mW, 0.05mm2 Source-Series-Terminated DAC Driver with Echo Canceller in 22nm CMOS for In-Vehicle Communication
IEEE Solid State Circuit Letters, 4 :10-13
2021

2020

Vehring, S.; Ding, Y.; Scholz, P.; Gerfers, F.
A 3.1-dBm E-Band Truly Balanced Frequency Quadrupler in 22-nm FDSOI CMOS
IEEE Microwave and Wireless Components Letters, 30 (12) :1165-1168
2020

2019

Mai, A.; Scholz, P.; Fischer, G.; Gerfers, F.
High Performance Electronic Design Education - from Technology towards High Frequency Chip Sets
IEEE Frontiers in Education Conf. (FIE), Seite 1-8
Herausgeber: IEEE
2019
Hecht, U.; Ledentsov, N.; Scholz, P.; Agustin, M.; Schulz, P.; Ledentsov, N.N.; Gerfers, F.
Non-Linear PAM-4 VCSEL Equalization and 22 nm SOI CMOS DAC for 112 Gbit/s Data Transmission
12th German Microwave Conference (GeMiC)
Herausgeber: IEEE
2019

2018

Runge, M.; Schmock, D.; Scholz, P.; Boeck, G.; Gerfers, F.
A 0.02-mm2 9-bit 100-MS/s Charge-Injection Cell Based SAR-ADC in 65-nm LP CMOS
ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), Seite 26-29
Herausgeber: IEEE
2018

2017

Maurath, D.; Tavakoli, A.; Vehring, S.; Scholz, P.; Ding, Y.; Boeck, G.; Gerfers, F.
A Low-Phase Noise 12 GHz Digitally Controlled Oscillator in 65 nm CMOS for a FMCW Radar Frequency Synthesizer
European Microwave Integrated Circuit Conference (EuMIC), Seite 232-235
2017
Vehring, S.; Ding, Y.; Scholz, P.; Maurath, D.; Barbin, S. E.; Gerfers, F.; Boeck, G.
A Trimmable 24 GHz Low-Noise Amplifier with 20 dB Gain and 3.7 dB Noise Figure in 65 nm Bulk CMOS
SBMO/IEEE MTT-S Int. Microwave and Optoelectronics Conf. (IMOC), Seite 1-4
2017
Vehring, S.; Ding, Y.; Scholz, P.; Maurath, D.; Berger, D.; Barbin, S. E.; Gerfers, F.; Boeck, G.
Degradation of Passive Microwave Components due to Metalstack Deviations in CMOS Technology
SBMO/IEEE MTT-S Int. Microwave and Optoelectronics Conf. (IMOC), Seite 1-5
2017
Scholz, P.; Vehring, S.; Kerst, U.; Berger, D.; Boit, C.; Boeck, G.; Gerfers, F.
Design for Failure Analysis in a 24 GHz Low-Noise Amplifier for Short Rrange Radar Applications Created in Silicon CMOS Technology
Int. Symp. for Testing and Failure Analysis (ISTFA), Seite 430-434
Herausgeber: ASM
2017
Vehring, S.; Ding, Y.; Scholz, P.; Maurath, D.; Gerfers, F.; Boeck, G.
High Output Power Frequency Doubler for Digital PLLs in Fully Integrated 24 GHz CMOS Radar Systems
IEEE Int. Conf. on Ubiquitous Wireless Broadband (ICUWB), Seite 1-4
Herausgeber: IEEE
2017